Interconnect arrangement with stress-reducing structure and method of fabricating the same

ABSTRACT

A semiconductor device structure and a method of fabricating the same are provided. The semiconductor device structure includes a gate structure embedded in a first dielectric layer over a substrate and a second dielectric layer formed over the first dielectric layer. The semiconductor device structure includes a conductive feature formed in the second dielectric layer over the gate structure and a first structure formed at least two sides of the conductive feature in the second dielectric layer. The first dielectric layer is made of a compressive material and the first structure is made of a tensile material or wherein the first dielectric layer is made of a compressive material and the first structure is made of a tensile material.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a Continuation application of co-pending U.S. patentapplication Ser. No. 14/987,429, filed on Jan. 4, 2016, which is aContinuation application of U.S. patent application Ser. No. 14/162,158,filed on Jan. 23, 2014 (now U.S. Pat. No. 9,252,047 issued on Feb. 2,2016), the entire of which is incorporated by reference herein.

BACKGROUND

Semiconductor devices are used in a variety of electronic applications,such as personal computers, cell phones, digital cameras, and otherelectronic equipment. Semiconductor devices are typically fabricated bysequentially depositing insulating or dielectric layers, conductivelayers, and semiconductive layers of material over a semiconductorsubstrate, and patterning the various material layers using lithographyto form circuit components and elements thereon.

One of the important drivers for increased performance in computers isthe higher levels of integration of circuits. This is accomplished byminiaturizing or shrinking device sizes on a given chip. As featuredensities in the semiconductor devices increase, the widths of theconductive lines, and the spacing between the conductive lines ofback-end of line (BEOL) interconnect structures in the semiconductordevices also need to be scaled down.

However, although existing methods for forming interconnect structureshave been generally adequate for their intended purposes, as devicescaling-down continues, they have not been entirely satisfactory in allrespects.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present disclosure, and theadvantages thereof, reference is now made to the following descriptionstaken in conjunction with the accompanying drawings, in which:

FIGS. 1A-1N are cross-sectional representations of various stages offorming a semiconductor device structure in accordance with someembodiments.

FIG. 2 is a top-view representation of a semiconductor device structurein accordance with some embodiments.

FIGS. 3A-3C are cross-sectional representations of various semiconductordevice structures in accordance with various embodiments.

DETAILED DESCRIPTION

The making and using of various embodiments of the disclosure arediscussed in detail below. It should be appreciated, however, that thevarious embodiments can be embodied in a wide variety of specificcontexts. The specific embodiments discussed are merely illustrative,and do not limit the scope of the disclosure.

It is to be understood that the following disclosure provides manydifferent embodiments, or examples, for implementing different featuresof the disclosure. Specific examples of components and arrangements aredescribed below to simplify the present disclosure. These are, ofcourse, merely examples and are not intended to be limiting. Moreover,the performance of a first process before a second process in thedescription that follows may include embodiments in which the secondprocess is performed immediately after the first process, and may alsoinclude embodiments in which additional processes may be performedbetween the first and second processes. Various features may bearbitrarily drawn in different scales for the sake of simplicity andclarity. Furthermore, the formation of a first feature over or on asecond feature in the description may include embodiments in which thefirst and second features are formed in direct or indirect contact.

Some variations of the embodiments are described. Throughout the variousviews and illustrative embodiments, like reference numbers are used todesignate like elements. It is understood that additional operations canbe provided before, during, and after the method, and some of theoperations described can be replaced or eliminated for other embodimentsof the method.

Embodiments of a semiconductor device structure and a method forfabricating the same are provided in accordance with some embodiments ofthe disclosure. The semiconductor device structure may include aninterconnect structure having a conductive feature formed in adielectric layer.

FIGS. 1A-1N illustrate cross-sectional representations of various stagesof forming a semiconductor device structure 100 in accordance with someembodiments. As shown in FIG. 1A, a substrate 102 is provided inaccordance with some embodiments. Substrate 102 may be a semiconductorwafer such as a silicon wafer. Alternatively or additionally, substrate102 may include elementary semiconductor materials, compoundsemiconductor materials, and/or alloy semiconductor materials. Examplesof the elementary semiconductor materials may be, but are not limitedto, crystal silicon, polycrystalline silicon, amorphous silicon,germanium, and/or diamond. Examples of the compound semiconductormaterials may be, but are not limited to, silicon carbide, galliumarsenic, gallium phosphide, indium phosphide, indium arsenide, and/orindium antimonide. Examples of the alloy semiconductor materials may be,but are not limited to, SiGe, GaAsP, AlInAs, AlGaAs, GaInAs, GaInP,and/or GaInAsP.

Substrate 102 includes device region 106, as shown in FIG. 1A inaccordance with some embodiments. Device region 106 may have variousdevice elements. Examples of device elements may include, but are notlimited to, transistors, diodes, and/or other applicable elements.Examples of the transistors may include, but are not limited to, metaloxide semiconductor field effect transistors (MOSFET), complementarymetal oxide semiconductor (CMOS) transistors, bipolar junctiontransistors (BJT), high voltage transistors, high frequency transistors,p-channel and/or n-channel field effect transistors (PFETs/NFETs), orthe like. Various processes are performed to form the device elements,such as deposition, etching, implantation, photolithography, annealing,and/or other applicable processes. In some embodiments, device region106 is formed in substrate 102 in a front-end-of-line (FEOL) process.

A dielectric layer 110 is formed over substrate 102, as shown in FIG. 1Ain accordance with some embodiments. In some embodiments, dielectriclayer 110 is an inter-metal dielectric (IMD) layer. Dielectric layer 110may include multilayers made of multiple dielectric materials, such as alow dielectric constant or an extreme low dielectric constant (ELK)material. Examples of the dielectric materials may include, but are notlimited to, oxide, SiO₂, borophosphosilicate glass (BPSG), tetraethylorthosilicate(TEOS), spin on glass (SOG), undoped silicate glass (USG),fluorinated silicate glass (FSG), high-density plasma (HDP) oxide, orplasma-enhanced TEOS (PETEOS). Dielectric layer 110 may be formed bychemical vapor deposition (CVD), physical vapor deposition, (PVD),atomic layer deposition (ALD), spin-on coating, or other applicableprocesses.

A first photoresist layer 113 is formed over dielectric layer 110, andfirst photoresist layer 113 includes one or more opening 114, as shownin FIG. 1B in accordance with some embodiments. The shape of opening 114may be adjusted as required. In some embodiments, opening 114 has ashape that is an enclosed or non-enclosed circle, rectangle, ellipse,square, or polygon, when viewed from a top view or above (not shown). Insome embodiments, opening 114 includes an n-shaped structure, T-shapedstructure, bar-shaped structure, and/or a linear structure, when viewedfrom a top view or above (not shown).

After first photoresist layer 113 is formed, an etching process 116 isperformed to etch dielectric layer 110 through opening 114, as shown inFIG. 1C in accordance with some embodiments. A stress-reducing structuretrench 118 is formed in dielectric layer 110 by etching process 116.Etching process 116 may be a wet etching process or a dry etchingprocess.

After etching process 116 is performed, first photoresist layer 113 isremoved, and a stress-relieving material 120 is provided to fill instress-reducing structure trench 118, as shown in FIG. 1D in accordancewith some embodiments. Stress-relieving material 120 is deposited andforms a stress-relieving or stress-reducing guard ring or structure toblock or prevent stress forces from acting on the conductive featureformed in sequential processes.

In some embodiment, stress-relieving material 120 is a materialdifferent from the material used to form dielectric layer 110.Therefore, stress-relieving material 120 is capable of stopping stresscaused by dielectric layer 110 from reaching conductive feature 108. Insome embodiments, dielectric layer 110 is made of a compressive materialsuch as SiO₂, and stress-relieving material 120 is a tensile materialsuch as Si₃N₄.

In some embodiment, stress-relieving material 120 is silicon oxide,silicon nitride, silicon oxynitride, or a combination thereof. In someembodiment, stress-relieving material 120 is Si_(x)O_(y), and x:y is ina range from about 0.1 to about 10. In some embodiment, stress-relievingmaterial 120 is Si_(x)N_(y), and x:y is in a range from about 0.1 toabout 10. In some embodiment, stress-relieving material 120 isSi_(x)O_(y)N_(z), and x:y is in a range from about 0.1 to about 10, ory:z is in a range from about 0.1 to about 10, or x:z is in a range fromabout 0.1 to about 10. X, y, and z may be adjusted to control theproperty of stress-relieving material 120.

Stress-relieving material 120 may be formed or deposited by chemicalvapor deposition (CVD), physical vapor deposition (PVD), atomic layerdeposition (ALD), high density plasma CVD (HDPCVD), metal organic CVD(MOCVD), plasma enhanced CVD (PECVD), or other applicable depositionprocesses.

After stress-relieving material 120 fills or is deposited instress-reducing structure trench 118, excess portion of stress-relievingmaterial 120 is removed to expose a top surface of dielectric layer 110,as shown in FIG. IE in accordance with some embodiments. The excessportion of stress-relieving material 120 may be removed by a chemicalmechanical polishing (CMP) process.

A stress-reducing structure 122 includes stress-reducing structuretrench 118. The shape of stress-reducing structure 122 may be similar toor the same as the shape of opening 114 of first photoresist layer 113.Although it is not shown in the cross-section representation illustratedin FIG. 1E, in some embodiments, stress-reducing structure 122 has ashape that is an enclosed or non-enclosed circle, rectangle, ellipse,square, or polygon, when viewed from a top view or above. In someembodiments, stress-reducing structure 122 includes an n-shapedstructure, T-shaped structure, bar-shaped structure, and/or a linearstructure. It should be noted that stress-reducing structure 122 mayinclude a plurality of portions having the same or different shapes, andsome of the portions may intersect with each other, while some of theportions may not intersect with each other.

In some embodiments, stress-reducing structure 122 has a height H₁ in arange from about 0.09 μm to about 35 μm. In some embodiments,stress-reducing structure 122 has a thickness T₁ in a range from about0.09 μm to about 3 μm.

In addition, as shown in FIG. 1E, a portion 124 of dielectric layer 110is surrounded by stress-reducing structure 122 in accordance with someembodiments. Stress-reducing structure 122 is configured to prevent thestress caused or created by dielectric layer 110 from directly enteringor acting on portion 124. Therefore, features formed in portion 124 ofdielectric layer 110 are protected by stress-reducing structure 122. Insome embodiments, portion 124 of dielectric layer 110 has a width W₁ ina range from about 0.01 μm to about 50 μm.

After stress-reducing structure 122 is formed, conductive feature 108 isformed in portion 124 of dielectric layer 110 surrounded bystress-reducing structure 122 in accordance with some embodiments. Asshown in FIG. 1F, a second photoresist layer 126 is formed overdielectric layer 110 in accordance with some embodiments. Secondphotoresist layer 126 includes openings 128 over portion 124 ofdielectric layer 110. It should be noted that although three openings128 are illustrated in FIG. 1F, the number of openings 128 in secondphotoresist layer 126 is not intended to be limiting. For example,second photoresist layer 126 may only include one opening.

Next, an etching process 130 is performed through openings 128, and viaholes 132 are formed in portion 124 of dielectric layer 110, as shown inFIG. 1G in accordance with some embodiments. Second photoresist layer126 is removed after via holes 132 are formed, as shown in FIG. 1H inaccordance with some embodiments.

After second photoresist layer 126 is removed, a third photoresist layer134 is formed over substrate 102 to cover dielectric layer 110 andstress-reducing structure 122, as shown in FIG. 11 in accordance withsome embodiments. In addition, portions 136 of third photoresist layer134 fill in via holes 132.

Next, an opening 138 is formed in third photoresist layer 134, as shownin FIG. 1J in accordance with some embodiments. Opening 138 exposesportions 136 of third photoresist layer 134 formed in via holes 132 andsome portions of dielectric layer surrounded (e.g. enclosed) bystress-reducing structure 122, In some embodiments, opening 138 isformed by an exposure process and a developing process.

After opening 138 of third photoresist layer 134 is formed, an etchingprocess 140 is performed through opening 138 to form a trench 140, asshown in FIG. 1K in accordance with some embodiments. More specifically,top portions of portion 136 formed in via holes 132 and top portions ofdielectric layer 110 exposed by opening 138 are removed.

After trench 140 is formed, remaining portions of third photoresistlayer 134, including those in via holes 132, are removed, as shown inFIG. 1L in accordance with some embodiments. As shown in FIG. 1L, trench140 is formed over via holes 132 and is directly connected with viaholes 132.

Next, a conductive material 142 is formed over substrate 102 to fill intrench 140 and via holes 132, as shown in FIG. 1M in accordance withsome embodiments. Conductive material 142 may be a highly-conductivemetal, low-resistive metal, elemental metal, transition metal, or thelike. Examples of conductive material 142 may include, but are notlimited to, copper (Cu), aluminum (Al), tungsten (W), titanium (Ti),gold (Au), or tantalum (Ta).

After conductive material 142 is formed, a CMP process is performed toform conductive feature 108, as shown in FIG. 1N in accordance with someembodiments. In some embodiments, the top surface of stress-reducingstructure 122 is substantially level with the top surface of conductivefeature 108. In some embodiments, the top surface of stress-reducingstructure 122 is substantially level with the top surface of theconductive feature, and the bottom surface of stress-reducing structure122 is substantially level with the bottom surface of the conductivefeature.

As shown in FIG. 1N, conductive feature 108, including vias 144 and ametal line 146, is formed in portion 124 of dielectric layer 110. Metalline 146 is formed in trench 140, and vias 144 in direct contact withmetal line 146 are formed in via holes 132.

In some embodiments, conductive feature 108 has a width W₂ in a rangefrom about 0.01 μm to about 50 μm. Since conductive feature 108 isformed in portion 124 surrounded by stress-reducing structure 122, widthW₂ is less than width W₁.

FIG. 2 illustrates a top view representation of semiconductor devicestructure 100 in accordance with some embodiments. Conductive feature108 is formed portion 124 of dielectric layer 110 surrounded (orenclosed) by stress-reducing structure 122. As shown in FIG. 2, stress112 is caused by dielectric layer 110 surrounding conductive feature108. In addition, stress 112 may be in a direction toward or away fromconductive feature 108.

More specifically, stress 112 may be a compressive stress or a tensilestress and may be directed toward or imparted on conductive feature 108.Therefore, if a conductive feature is not surrounded, or protected, bystress-reducing structure 122, the stress may induce or impart undesiredforces on conductive feature 108. In addition, the forces may result ina change of electron mobility of the device formed in device region 106under conductive feature 108. Therefore, the device formed underconductive feature 108 may have poor current uniformity due to stress112 and the performance of the device may be affected.

Accordingly, conductive feature 108 is formed in portion 124 ofdielectric layer 110 surrounded by stress-reducing structure 122, suchthat stress 112 cannot reach or do not affect conductive feature 108, asshown in FIG. 2 in accordance with some embodiments.

In some embodiments, stress-reducing structure 122 shown in a top viewhas the shape of a rectangle (but is not limited thereto). In someembodiments, stress-reducing structure 122 has a width W₃, and a ratioof the width W₃ to width W₂ is in a range from about 0.01 to about 2.

It should be noted that although embodiments described above, includingembodiments illustrated in FIGS. 1A-1N and FIG. 2, show only oneconductive feature formed in one dielectric layer, the semiconductordevice structures may include various conductive features in variousdielectric layers. That is, the shapes, sizes, and materials of theconductive features may be adjusted depending on their applications, andthe scope of the disclosure is not intended to be limiting.

In addition, conductive feature 108 may further include a liner and/or abarrier layer. For example, a liner (not shown) may be formed in trench140 and via holes 132, and the liner covers the sidewalls and bottom oftrench 140 and via holes 132. The liner may be eithertetraethylorthosilicate (TEOS) or silicon nitride, although any otherapplicable dielectric may alternatively be used. The liner may be formedusing a plasma enhanced chemical vapor deposition (PECVD) process,although other applicable processes, such as physical vapor depositionor a thermal process, may alternatively be used. The barrier layer (notshown) may be formed over the liner (if present) and may cover thesidewalls and bottom of the opening. The barrier layer may be formedusing a process such as chemical vapor deposition (CVD), physical vapordeposition (PVD), plasma enhanced CVD (PECVD), plasma enhanced physicalvapor deposition (PEPVD), atomic layer deposition (ALD), or any otherapplicable deposition processes. The barrier layer may be made oftantalum nitride, although other materials, such as tantalum, titanium,titanium nitride, or the like may, also be used.

FIG. 3A illustrates a cross-sectional representation of a semiconductordevice structure 100 a in accordance with some embodiments. Ainterconnection structure 104 a formed in semiconductor device structure100 a includes conductive features, such as conductive features 108 a,108 b, and 108 c. These conductive features are formed in a number ofdielectric layers, such as dielectric layers110 a, 110 b, and 110 c. Inaddition, conductive feature 108 a is surrounded by a stress-reducingstructure 122 a formed in dielectric layer 110 a.

Moreover, device region 106 formed in substrate 102 includes a gatestructure 401 embedded in an interlayer dielectric (ILD) layer 403,source/drain regions 405, and isolation structures 407. Sincestress-reducing structure 122 is formed to protect conductive feature108 a from stress 112, performance of gate structure 401 can beunaffected although conductive feature 108 a is formed over gatestructure 401.

In some embodiments, gate structure 401 includes a gate dielectric layer409, a gate electrode 411, and spacers (not shown). In some embodiments,gate dielectric layer 409 is made of high k dielectric materials, suchas metal oxides, metal nitrides, metal silicates, transitionmetaloxides, transition metalnitrides, transition metalsilicates,oxynitrides of metals, or metal aluminates. Examples of the dielectricmaterial may include, but are not limited to, hafnium oxide (HfO₂),hafnium silicon oxide (HfSiO), hafnium silicon oxynitride (HfSiON),hafnium tantalum oxide (HfTaO), hafnium titanium oxide (HfTiO), hafniumzirconium oxide (HfZrO), zirconium silicate, zirconium aluminate,silicon oxide, silicon nitride, silicon oxynitride, zirconium oxide,titanium oxide, aluminum oxide, or hafnium dioxide-alumina (HfO₂—Al₂O₃)alloy.

In some embodiments, gate electrode 411 is made of a conductivematerial, such as aluminum, copper, tungsten, titanium, tantulum,titanium nitride, tantalum nitride, nickel silicide, cobalt silicide,TaC, TaSiN, TaCN, TiAl, TiAlN, or other applicable materials.

ILD layer 403 may include multilayers made of multiple dielectricmaterials, such as silicon oxide, silicon nitride, silicon oxynitride,tetraethoxysilane (TEOS), phosphosilicate glass (PSG),borophosphosilicate glass (BPSG), low-k dielectric material, and/orother applicable dielectric materials. Examples of low-k dielectricmaterials may include, but are not limited to, fluorinated silica glass(FSG), carbon doped silicon oxide, amorphous fluorinated carbon,parylene, bis-benzocyclobutenes (BCB), or polyimide. ILD layer 403 maybe formed by chemical vapor deposition (CVD), physical vapor deposition,(PVD), atomic layer deposition (ALD), spin-on coating, or otherapplicable processes.

It should be noted that device region 106 shown in FIG. 3A is merely anexample, and other devices may be additionally or alternatively formedin device region 106. In addition, some dielectric layers and conductivefeatures are omitted in FIG. 3A for clarity.

FIG. 3B illustrates a cross-sectional representation of a semiconductordevice structure 100 b in accordance with some embodiments.Semiconductor device structure 100 b is similar to semiconductor devicestructure 100 a except stress-reducing structure I22 b and 122 c arealso formed. More specifically, stress-reducing structure 122 b isformed in a dielectric layer 110 b to protect conductive feature 108 b,and stress-reducing structure 122 c is formed in a dielectric layer 110c to protect conductive feature 108 c.

FIG. 3C illustrates a cross-sectional representation of a semiconductordevice structure 100 c in accordance with some embodiments.Semiconductor device structure 100 c also includes gate structure 401formed in device region 106 of substrate 102, similar to that ofsemiconductor device structure 100 a or 100 b.

In addition, conductive features 108 a′ and 108 a″ are formed indielectric layer 110 a in accordance with some embodiments. Conductivefeature 108 a′ is surrounded by a stress-reducing structure 122 a′, andconductive feature 108 a″ is surrounded by a stress-reducing structure122 a″. As shown in FIG. 3C, conductive feature 108 a′ includes onemetal line 146 a′ and one via 144 a″ connected with metal line 146 a′.In addition, conductive feature 108 a″ includes one metal line 146 a″and one via 144 a″ connected with metal line 146 a″. Moreover, in someembodiments, the edges of conductive feature 108 a″ are in directcontact with stress-reducing structure 122 a″, as shown in FIG. 3C inaccordance with some embodiments.

Furthermore, conductive features 108 b′ and 108 b″ are formed indielectric layer 110 b, and conductive feature 108 c′ is formed indielectric layer 110 c in accordance with some embodiments. As shown inFIG. 3C, conductive features 108 b′ and 108 b″ are both formed inportion 124 which is surrounded by a stress-reducing structure 122 b′.Therefore, conductive features 108 b′ and 108 b″ are both protected bystress-reducing structure 122 b′. Conductive feature 108 c′ includes onemetal line 146 c′ and two vias 144 c′ connected with metal line 146 c′and is protected by stress-reducing structure 122 c′.

As shown in FIG. 3C, conductive features, such as conductive features108 a′, 108 a″, 108 b′, 108 b″, and 108 c′, with different shapes andsizes can be formed in interconnect structure 104 c. Accordingly, theapplication of stress-reducing structure, such as stress-reducingstructure 122 a′, 122 a″, 122 b′, and 122 c, may also be varied, and thescope of the disclosure is not intended to be limiting.

As described previously, when a conductive feature is unprotected,stress caused by dielectric layer surrounding the conductive featurewill induce or impart undesired forces, such as pulling forces, on theconductive feature and will affect the performance of devices formedunder conductive feature 108. For example, the electron mobility of thedevices may be altered and the devices may have poor current uniformity.Therefore, in various embodiments, the stress-reducing structure, suchas stress-reducing structure 122, is formed to protect the conductivefeatures, such as conductive feature 108. As shown in FIG. 1N,conductive feature 108 is formed in portion 124 of dielectric layer 110.Accordingly, conductive feature 108 is surrounded, and protected, bystress-reducing structure 122, and the performance of the devices formedin device region 106 under conductive feature 108 is not affected bystress 112.

Embodiments of mechanisms for a semiconductor device structure areprovided. The semiconductor device structure includes a conductivefeature formed in a dielectric layer. In addition, the conductivefeature is surrounded by a stress-reducing structure (e.g. a guard ring)formed in the dielectric layer. The stress-reducing structure isconfigured to protect the conductive feature from the stress forcescaused by the dielectric layer outside the stress-reducing structure.Therefore, the performance of the devices formed below the conductivefeature will not be affected by the stress forces.

In some embodiments, a semiconductor device structure is provided. Thesemiconductor device structure includes a gate structure embedded in afirst dielectric layer over a substrate and a second dielectric layerformed over the first dielectric layer. The semiconductor devicestructure includes a conductive feature formed in the second dielectriclayer over the gate structure and a first structure formed at least twosides of the conductive feature in the second dielectric layer. Thefirst dielectric layer is made of a compressive material and the firststructure is made of a tensile material or wherein the first dielectriclayer is made of a compressive material and the first structure is madeof a tensile material.

In some embodiments, a semiconductor device structure is provided. Thesemiconductor device structure includes a substrate and a gate structureformed over the substrate. The semiconductor device structure includesan interconnection structure formed over the gate structure, and theinterconnection structure includes a first dielectric layer, a firststructure formed in the first dielectric layer, a portion of the firstdielectric layer is surrounded by the first structure and a firstconductive feature formed in the portion of the first dielectric layeris surrounded by the first structure. The first dielectric layer is madeof a compressive material and the first structure is made of a tensilematerial or the first dielectric layer is made of a compressive materialand the first structure is made of a tensile material.

In some embodiments, a method for forming a semiconductor devicestructure is provided. The method includes forming a dielectric layerover a substrate and forming a trench in the dielectric layer. Themethod includes filling the trench with a material layer to form a firststructure, and a portion of the first dielectric layer is surrounded bythe first structure. The method also includes forming a conductivefeature in the portion of the first dielectric layer surrounded by thefirst structure. The dielectric layer is made of a compressive materialand the first structure is made of a tensile material or the dielectriclayer is made of a compressive material and the first structure is madeof a tensile material.

Although embodiments of the present disclosure and their advantages havebeen described in detail, it should be understood that various changes,substitutions and alterations can be made herein without departing fromthe spirit and scope of the disclosure as defined by the appendedclaims. For example, it will be readily understood by those skilled inthe art that many of the features, functions, processes, and materialsdescribed herein may be varied while remaining within the scope of thepresent disclosure. Moreover, the scope of the present application isnot intended to be limited to the particular embodiments of the process,machine, manufacture, composition of matter, means, methods and stepsdescribed in the specification. As one of ordinary skill in the art willreadily appreciate from the disclosure of the present disclosure,processes, machines, manufacture, compositions of matter, means,methods, or steps, presently existing or later to be developed, thatperform substantially the same function or achieve substantially thesame result as the corresponding embodiments described herein may beutilized according to the present disclosure. Accordingly, the appendedclaims are intended to include within their scope such processes,machines, manufacture, compositions of matter, means, methods, or steps.

What is claimed is:
 1. A semiconductor structure, comprising: a gatestructure embedded in a first dielectric layer over a substrate; asecond dielectric layer formed over the first dielectric layer; aconductive feature formed in the second dielectric layer over the gatestructure; a first structure formed at least two sides of the conductivefeature in the second dielectric layer, wherein the first dielectriclayer is made of a compressive material and the first structure is madeof a tensile material or wherein the first dielectric layer is made of acompressive material and the first structure is made of a tensilematerial.
 2. The semiconductor structure as claimed in claim 1, whereinthe first structure is made of Si_(x)O_(y), and x:y is in a range fromabout 0.1 to about
 10. 3. The semiconductor structure as claimed inclaim 1, wherein the first structure is made of Si_(x)N_(y), and x:y isin a range from about 0.1 to about
 10. 4. The semiconductor structure asclaimed in claim 1, wherein the first structure is made ofSi_(x)O_(y)N_(z), and x:y is in a range from about 0.1 to about 10, ory:z is in a range from about 0.1 to about 10, or x:z is in a range fromabout 0.1 to about
 10. 5. The semiconductor structure as claimed inclaim 1, wherein a top surface of the first structure is substantiallylevel with a top surface of the conductive feature, and a bottom surfaceof the first structure is substantially level with a bottom surface ofthe conductive feature.
 6. The semiconductor structure as claimed inclaim 1, wherein the conductive feature comprises vias and a metal line.7. A semiconductor structure, comprising: a substrate; a gate structureformed over the substrate; and an interconnection structure formed overthe gate structure, wherein the interconnection structure comprises: afirst dielectric layer; a first structure formed in the first dielectriclayer, wherein a portion of the first dielectric layer is surrounded bythe first structure; and a first conductive feature formed in theportion of the first dielectric layer is surrounded by the firststructure, wherein the first dielectric layer is made of a compressivematerial and the first structure is made of a tensile material orwherein the first dielectric layer is made of a compressive material andthe first structure is made of a tensile material.
 8. The semiconductorstructure as claimed in claim 7, wherein the portion of the firstdielectric layer surrounded by the first structure has a shape that isan enclosed or non-enclosed circle, rectangle, ellipse, square, orpolygon.
 9. The semiconductor device structure as claimed in claim 7,wherein the conductive feature comprises a metal line and a viaconnected to the metal line.
 10. The semiconductor structure as claimedin claim 9, wherein a top surface of the first structure issubstantially level with a top surface of the metal line and a bottomsurface of the first structure is substantially level with a bottomsurface of the via.
 11. The semiconductor structure as claimed in claim7, wherein the interconnection structure further comprises: a seconddielectric layer formed over the first dielectric layer; a secondstructure formed in the second dielectric layer; and a second conductivefeature formed in the second dielectric layer, wherein the secondconductive feature is surrounded by the second structure, wherein thesecond dielectric layer is made of a compressive material and the secondstructure is made of a tensile material or wherein the second dielectriclayer is made of a compressive material and the second structure is madeof a tensile material.
 12. The semiconductor structure as claimed inclaim 11, wherein the second structure and the first structure are notaligned with each other.
 13. The semiconductor structure as claimed inclaim 11, wherein the first conductive feature and the second conductivefeature are connected with each other.
 14. The semiconductor structureas claimed in claim 7, wherein the interconnection structure furthercomprises: a second dielectric layer formed over the first dielectriclayer; a third structure formed in the second dielectric layer; and athird conductive feature formed in a portion of the second dielectriclayer surrounded by the third structure.
 15. A method for forming asemiconductor structure comprising: forming a dielectric layer over asubstrate; forming a trench in the dielectric layer; filling the trenchwith a material layer to form a first structure, wherein a portion ofthe first dielectric layer is surrounded by the first structure; andforming a conductive feature in the portion of the first dielectriclayer surrounded by the first structure, wherein the dielectric layer ismade of a compressive material and the first structure is made of atensile material or wherein the dielectric layer is made of acompressive material and the first structure is made of a tensilematerial.
 16. The method for forming the semiconductor device structureas claimed in claim 15, wherein forming the conductive feature furthercomprises: forming a via hole in the dielectric layer, wherein the viahole is surrounded by the first structure; forming a photoresist layerover the dielectric layer, wherein a portion of the photoresist layerfills in the via hole; patterning the photoresist layer to form anopening, wherein the opening exposes the portion of the photoresistlayer formed in the via hole and a portion of the dielectric layer;performing an etching process through the opening to form a trenchconnected to the via hole, wherein a top portion of the photoresistlayer in the via hole and a top portion of the dielectric layer exposedby the opening are removed by the etching process; removing remainingportions of the photoresist layer; and depositing a conductive materialin the via hole and the trench to form the conductive feature.
 17. Themethod for forming the semiconductor structure as claimed in claim 16,wherein the conductive feature comprises a via formed in the via holeand a metal line formed in the trench.
 18. The method for forming thesemiconductor structure as claimed in claim 16, further comprising:performing a polishing process to remove a portion of the conductivematerial, such that a top surface of the first structure issubstantially level with a top surface of the conductive feature. 19.The method for forming the semiconductor structure as claimed in claim15, further comprising: forming a device region in the substrate,wherein the conductive feature is formed over the device region.
 20. Themethod for forming the semiconductor structure as claimed in claim 15,wherein the first structure is a stress-reducing structure.